Datasheet Details
| Part number | IRL3803V |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.31 KB |
| Description | N-Channel MOSFET |
| Datasheet | IRL3803V-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor IRL3803V，IIRL3803V ·.
| Part number | IRL3803V |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.31 KB |
| Description | N-Channel MOSFET |
| Datasheet | IRL3803V-INCHANGE.pdf |
|
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|
·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 140 IDM Drain Current-Single Pulsed 470 PD Total Dissipation @TC=25℃ 200 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.74 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
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IRL3803VL | Power MOSFET | International Rectifier |
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