Datasheet Summary
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- 94735
HEXFET® Power MOSFET l l l l l l l
IRL3803VS IRL3803VL
VDSS = 30V
Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL3803VS) Low-profile through-hole (IRL3803VL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
RDS(on) = 5.5mΩ
ID = 140A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a...