IRL3803VSPBF Datasheet | International Rectifier

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. - 95449 IRL3803VSPb F IRL3803VLPb F HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 5.5mΩ ID = 140A‡ The D2Pak is a surface mount power package capable of acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. D2Pak IRL3803VS TO-262 IRL3803VL Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V ˆ Continuous Drain Current, VGS @ 10V ˆ Pulsed Drain Current ˆ Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt - ˆ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient (PCB Mounted, steady state)‰ Max. 140‡ 110 470 3.8 200 1.4 ± 16 71 20 5.0 -55 to + 175 300 (1.6mm from case ) Typ. - - - - - - Max. 0.75 40 Units W W W/°C V A m J V/ns Units °C/W .irf. 1 1/4/05 IRL3803VS/IRL3803VLPb F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS...