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IRL3803VSPBF - Power MOSFET

General Description

resistance per silicon area.

Key Features

  • . U. T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [VDD] [ISD] www. irf. com.
  • VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs 7 IRL3803VS/IRL3803VLPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 30 S W IT H L OT CODE 8024 AS S E MB LE D ON WW 02, 2000 IN T H E AS S E M B L Y L IN E ".

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL3803VS Power MOSFET
IRL3803V Power MOSFET
IRL3803VL Power MOSFET
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IRL3803VPBF HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175°C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. PD - 95449 IRL3803VSPbF IRL3803VLPbF HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 5.