IRL3803VLPbF Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. PD - 95449 IRL3803VSPbF...
IRL3803VLPbF Key Features
- Advanced Process Technology
- Surface Mount (IRL3803VS)
- Low-profile through-hole (IRL3803VL)
- 175°C Operating Temperature
- Fast Switching G
- Fully Avalanche Rated