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IRL3803VLPbF - Power MOSFET

Download the IRL3803VLPbF datasheet PDF. This datasheet also covers the IRL3803VSPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

resistance per silicon area.

Key Features

  • . U. T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [VDD] [ISD] www. irf. com.
  • VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs 7 IRL3803VS/IRL3803VLPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 30 S W IT H L OT CODE 8024 AS S E MB LE D ON WW 02, 2000 IN T H E AS S E M B L Y L IN E ".

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRL3803VSPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRL3803V N-Channel MOSFET INCHANGE
IRL3803VS N-Channel MOSFET INCHANGE
IRL3803 N-Channel MOSFET INCHANGE
IRL3803PBF MOSFET Infineon
IRL3103 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL3803VL Power MOSFET
IRL3803V Power MOSFET
IRL3803VPBF HEXFET Power MOSFET
IRL3803VS Power MOSFET
IRL3803VSPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175°C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. PD - 95449 IRL3803VSPbF IRL3803VLPbF HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 5.