IRLR024N Overview
Key Features
- Static drain-source on-resistance: RDS(on)≤65mΩ
- Enhancement mode
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Fast Switching
| Part | IRLR024N |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 236.98 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRLR024NPBF | International Rectifier | Power MOSFET |
| IRLR024N | International Rectifier | Power MOSFET |
| IRLR024 | International Rectifier | Power MOSFET |
| IRLR024PBF | International Rectifier | HEXFET POWER MOSFET |
| IRLR024 | Vishay | Power MOSFET |