Datasheet4U Logo Datasheet4U.com

IRLR024N - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤65mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IRLR024N

Datasheet Details

Part number IRLR024N
Manufacturer INCHANGE
File Size 236.98 KB
Description N-Channel MOSFET
Datasheet download datasheet IRLR024N Datasheet
Additional preview pages of the IRLR024N datasheet.

📁 Similar Datasheet

  • IRLR024N - Power MOSFET (International Rectifier)
  • IRLR024NPBF - Power MOSFET (International Rectifier)
  • IRLR024 - (IRLU/R024) Power MOSFET (International Rectifier)
  • IRLR024 - N-Channel MOSFET (Samsung Electronics)
  • IRLR024 - Power MOSFET (Vishay)
  • IRLR024PBF - HEXFET POWER MOSFET (International Rectifier)
  • IRLR024Z - Power MOSFET (International Rectifier)
  • IRLR024ZPbF - Power MOSFET (International Rectifier)
  • IRLR020 - N-Channel MOSFET (Samsung Electronics)
  • IRLR014 - HEXFET POWER MOSFET (International Rectifier)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor IRLR024N, IIRLR024N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤65mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 72 PD Total Dissipation @TC=25℃ 45 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 3.3 110 UNIT ℃/W ℃/W isc website：www.iscsemi.
Published: |