Datasheet4U Logo Datasheet4U.com

IRLR024NPBF - Power MOSFET

Download the IRLR024NPBF datasheet PDF. This datasheet also covers the IRLU024NPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLU024NPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD- 95081A IRLR024NPbF IRLU024NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive D l Surface Mount (IRLR024N) l Straight Lead (IRLU024N) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l Lead-Free S Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. VDSS = 55V RDS(on) = 0.065Ω ID = 17A The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.