IRLR024NPBF Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. VDSS = 55V RDS(on) =...
IRLR024NPBF Key Features
- Logic-Level Gate Drive D
- Surface Mount (IRLR024N)
- Straight Lead (IRLU024N)
- Advanced Process Technology
- Fast Switching G
- Fully Avalanche Rated