IRLR024ZPbF Overview
Key Specifications
Package: DPAK
Mount Type: Surface Mount
Pins: 3
Height: 2.2606 mm
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Key Features
- Advanced Process Technology
- Ultra Low On-Resistance n 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
