IRLR024ZPbF Overview
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
| Part number | IRLR024ZPbF |
|---|---|
| Datasheet | IRLR024ZPbF-InternationalRectifier.pdf |
| File Size | 331.10 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | Power MOSFET |
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This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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IRLR024 | N-Channel MOSFET | Samsung Electronics |
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IRLR024 | Power MOSFET | Vishay |
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IRLR024N | N-Channel MOSFET | INCHANGE |
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRLR024Z | Power MOSFET |
| IRLR024 | (IRLU/R024) Power MOSFET |
| IRLR024N | Power MOSFET |
| IRLR024NPBF | Power MOSFET |
| IRLR024PBF | HEXFET POWER MOSFET |
| IRLR014 | HEXFET POWER MOSFET |
| IRLR014N | HEXFET Power MOSFET |
| IRLR014NPBF | HEXFET POWER MOSFET |
| IRLR014PBF | Power MOSFET |
| IRLR110 | POWER MOSFET |