IRLR3110Z
Overview
- Static drain-source on-resistance: RDS(on)≤14mΩ
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Fast switching
| Part | IRLR3110Z |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 237.82 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRLR3110ZPBF | VBsemi | N-Channel MOSFET |
| IRLR3110ZPBF | International Rectifier | Power MOSFET |
| IRLR3114ZPbF | International Rectifier | Power MOSFET |