IXTA1N100P - TO-263 N-Channel MOSFET

Features

With To-263(D2PAK) package.
Low input capacitance and gate charge.
Low gate input resistance.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IXTA1N100P
Manufacturer	INCHANGE
File Size	198.56 KB
Description	TO-263 N-Channel MOSFET
Datasheet	IXTA1N100P Datasheet
Additional preview pages of the IXTA1N100P datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTA1N100P ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 1000 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.0 IDM Drain Current-Single Pulsed 1.8 PD Total Dissipation 50 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.

Published: Sep 3, 2020 |