IXTA60N10T - N-Channel MOSFET

Inchange Semiconductor

Key Features

With TO-263(D2PAK) packaging.
Low gate charge.
High speed switching.
Low on-resistance.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IXTA60N10T n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IXTA60N10T
Manufacturer	Inchange Semiconductor
File Size	199.03 KB
Description	N-Channel MOSFET
Datasheet	IXTA60N10T Datasheet

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTA60N10T ·FEATURES ·With TO-263(D2PAK) packaging ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 180 PD Total Dissipation 176 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.85 UNIT ℃/W isc website：www.iscsemi.