IXTQ36N50P - N-Channel MOSFET

INCHANGE

IXTQ36N50P Datasheet Preview — Preview of IXTQ36N50P PDF

Datasheet Details

Part number	IXTQ36N50P
Manufacturer	INCHANGE
File Size	235.38 KB
Description	N-Channel MOSFET
Datasheet	IXTQ36N50P-INCHANGE.pdf

IXTQ36N50P Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±30 V 36 A 100 A 500 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal

Features

Drain Current ID= 36A@ TC=25℃.
Drain Source Voltage- : VDSS= 500V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.17Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 IXTQ36N50P Similar Datasheet

IXTQ36N30P - Power MOSFET (IXYS Corporation)
IXTQ30N50L - Power MOSFET (IXYS)
IXTQ30N50L2 - Power MOSFET (IXYS)
IXTQ30N50P - PolarHV Power MOSFET (IXYS)
IXTQ30N60L2 - Power MOSFET (IXYS)
IXTQ30N60P - PolarHV Power MOSFET (IXYS)
IXTQ32N65X - Power MOSFET (IXYS)
IXTQ32P20T - Power MOSFET (IXYS)

Other Datasheets by INCHANGE

IXTQ102N15T - N-Channel MOSFET
IXTQ102N20T - N-Channel MOSFET
IXTQ110N055P - N-ChannelMOSFET
IXTQ110N10P - N-Channel MOSFET
IXTQ120N15P - N-ChannelMOSFET
IXTQ120N20P - N-ChannelMOSFET

Published: Oct 15, 2020 |