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KSB1015 Datasheet Preview

KSB1015 Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
KSB1015
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -1.7 V(Max)@IC= -3A
·Good Linearity of hFE
·Complement to Type KSD1406
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-0.5
A
2
W
25
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

KSB1015 Datasheet Preview

KSB1015 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VBE(on) Base-Emitter On Voltage
IC= -0.5A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -5V
hFE-2
DC Current Gain
IC= -3A; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC=-0.5A; VCE= -5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -2.0A ,IB1= -IB2= -0.2A,
VCC= -30V; RL= 15Ω
hFE-1 Classifications
O
Y
60-120 100-200
KSB1015
MIN TYP. MAX UNIT
-60
V
-1.7 V
-1.0 V
-100 μA
-100 μA
60
200
20
150
pF
9
MHz
0.4
μs
1.7
μs
0.5
μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number KSB1015
Description PNP Transistor
Maker INCHANGE
Total Page 3 Pages
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KSB1015 Datasheet PDF





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