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INCHANGE

KSB1151 Datasheet Preview

KSB1151 Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
DESCRIPTION
·Large Collector Current
·Low Collector Saturation Voltage
·High Power Dissipation
·Complement to KSD1691
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for use in DC-DC converter, or driver of solenoid
or motor.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-5
A
ICP
Collector Current-Pulse
-8
A
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ
Junction Temperature
Tstg
Storage Temperature Range
-1
A
20
W
1.3
150
-55~150
KSB1151
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

KSB1151 Datasheet Preview

KSB1151 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -0.1A; VCE= -1V
hFE-2
DC Current Gain
IC= -2A; VCE= -1V
hFE-3
DC Current Gain
IC= -5A; VCE= -2V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -2A, IB1= -IB2= -0.2A;
RL= 5Ω; VCC= -10V
hFE-2 Classifications
O
Y
G
100-200 160-320 200-400
KSB1151
MIN TYP. MAX UNIT
-0.3 V
-1.2 V
-10 μA
-10 μA
60
100
400
50
1.0 μs
2.5 μs
1.0 μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number KSB1151
Description PNP Transistor
Maker INCHANGE
Total Page 3 Pages
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KSB1151 Datasheet PDF





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