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KSB1151 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

General Description

·Large Collector Current ·Low Collector Saturation Voltage ·High Power Dissipation ·plement to KSD1691 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.

APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid or motor.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse -8 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range -1 A 20 W 1.3 150 ℃ -55~150 ℃ KSB1151 isc website:.iscsemi.

KSB1151 Distributor