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KSB1151 - PNP Transistor

Description

Large Collector Current Low Collector Saturation Voltage High Power Dissipation Complement to KSD1691

and reliable operation.

or motor.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon PNP Power Transistor DESCRIPTION ·Large Collector Current ·Low Collector Saturation Voltage ·High Power Dissipation ·Complement to KSD1691 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid or motor. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse -8 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range -1 A 20 W 1.
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