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KTC2026 Datasheet Preview

KTC2026 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistors
DESCRIPTION
·Low Saturation Voltage-
: VCE(sat)=1.0V(Max)@ (IC= 2A, IB= 0.2A)
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)
·Complement to Type KTA1046
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
IB
Base Current
Collector Power Dissipation
TC=25
PC
Collector Power Dissipation
Ta=25
Tj
Junction Temperature
Tstg
Storage Temperature Range
60
V
7
V
3
A
0.5
A
25
W
2
150
-55~150
KTC2026
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

KTC2026 Datasheet Preview

KTC2026 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 0.5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 0.5A ; VCE= 5V
COB
Output Capacitance
IE= 0 ; VCB= 10V,ftest= 1MHz
fT
Current-Gain—Bandwidth Product
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 0.5A ; VCE= 5V
IC= 2.0A ,IB1= -IB2= 0.2A
hFE Classifications
Y
GR
100-200 150-300
KTC2026
MIN TYP MAX UNIT
60
V
1.0
V
1.0
V
0.1
mA
0.1
mA
100
300
35
pF
30
MHz
0.65
μs
1.3
μs
0.65
μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number KTC2026
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
PDF Download

KTC2026 Datasheet PDF





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