Datasheet Details
| Part number | MD2001FX |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.17 KB |
| Description | NPN Transistor |
| Datasheet |
 MD2001FX Datasheet
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| Part number | MD2001FX |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.17 KB |
| Description | NPN Transistor |
| Datasheet |
MD2001FX Datasheet
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for monitor and real flat TV ·Switch mode power supplies for CRT TV ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 9 V IC Collector Current- Continuous 12 A ICM Collector peak current (tp<5ms) 18 A IB Base Current- Continuous 6 A PTOT Total dissipation at TC=25℃ 58 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.15 ℃/W MD2001FX isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MD2001FX MIN TYP.
MAX UNIT VCEO(sus)(1) Collector-emitter sustaining Voltage IC= 50mA;
IC= 0 700 VCE(sat)(1) Collector-Emitter Saturation Voltage IC= 6.0A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MD2001FX | High voltage NPN Power transistor | ST Microelectronics |
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MD2001FH | High voltage NPN Power transistor | ST Microelectronics |
| Part Number | Description |
|---|---|
| MD2310FX | NPN Transistor |