900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

MD2001FX Datasheet Preview

MD2001FX Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min)
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Horizontal deflection output for monitor and real flat TV
·Switch mode power supplies for CRT TV
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current- Continuous
12
A
ICM
Collector peak current (tp<5ms)
18
A
IB
Base Current- Continuous
6
A
PTOT
Total dissipation at TC=25
58
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 2.15 /W
MD2001FX
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

MD2001FX Datasheet Preview

MD2001FX Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MD2001FX
MIN TYP. MAX UNIT
VCEO(sus)(1) Collector-emitter sustaining Voltage IC= 50mA; IC= 0
700
VCE(sat)(1) Collector-Emitter Saturation Voltage IC= 6.0A; IB=1.5A
VBE(sat)(1) Base-Emitter Saturation Voltage
IC= 6.0A; IB=1.5A
ICBO
Collector Cutoff Current
VCB= 1500V ; IE= 0
VCB= 1500V ; IE= 0 ,TC=125
IEBO
Emitter Cutoff Current
VEB= 9V ; IC= 0
V
1.8
V
1.2
V
0.2
2
mA
1
mA
hFE-1(1)
DC Current Gain
IC= 6A ; VCE= 1V
4.5
hFE-2(1)
DC Current Gain
IC= 6A ; VCE= 5V
4.5
7
Switching times
ts
Storage Time
tf
Fall Time
ICP= 5A , IB(on))= 0.9A ;
fH= 64kHz VBE(Off)=-2.7V,
LBB(OFF)=1.6uH
2.6
μs
0.2
μs
1. Pulsed duration =300us,duty cycle 1.5%
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number MD2001FX
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
PDF Download

MD2001FX Datasheet PDF





Similar Datasheet

1 MD2001FH High voltage NPN Power transistor
ST Microelectronics
2 MD2001FX High voltage NPN Power transistor
ST Microelectronics
3 MD2001FX NPN Transistor
INCHANGE





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy