Datasheet4U Logo Datasheet4U.com

MJ11017 - PNP Transistor

General Description

High DC Current Gain- : hFE = 400(Min)@ IC= -10A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -150V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -10A = -3.4V(Max)@ IC= -15A Complement to the NPN MJ11018 Minimum Lot-to-Lot variations for

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MJ11017 30 AMPERE DARLINGTON POWER TRANSISTORS Motorola Inc
MJ11017 DARLINGTON POWER TRANSISTORS ON Semiconductor
MJ11012 30 AMPERE DARLINGTON POWER TRANSISTORS Motorola Inc
MJ11012 High-Current Complementary Silicon NPN Transistors ON Semiconductor
MJ11012 NPN Transistor DIGITRON

Other Datasheets by Inchange Semiconductor

Part Number Description
MJ11011 PNP Transistor
MJ11012 NPN Transistor
MJ11014 NPN Transistor
MJ11015 PNP Transistor
MJ11018 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 400(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -150V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -10A = -3.4V(Max)@ IC= -15A ·Complement to the NPN MJ11018 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifiers ,low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -150 VCEO Collector-Emitter Voltage -150 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -15 ICM Collector Current-Peak -30 IB Base Current- Continuous -0.