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MJ12002 - NPN Transistor

General Description

High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in large screen color deflection circuits.

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isc Silicon NPN Power Transistor DESCRIPTION ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1500 V VCEO(SUS) Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IE Emitter Current-Continuous 7 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W MJ12002 isc website：www.iscsemi.