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MJ15018 Datasheet Preview

MJ15018 Datasheet

NPN Transistor

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isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
MJ15018
DESCRIPTION
·With TO-3 packaging
·Very high DC current gain
·Monolithic darlington transistor with integrated
antiparallel collector-emitter diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Electronic ignition
·Alternator regulator
·Motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
IB
PD
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current- Continuous
Collector Power Dissipation
200
V
200
V
7
V
4
A
2
A
150
W
Tj
Max.Junction Temperature
200
Tstg
Storage Temperature Range
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

MJ15018 Datasheet Preview

MJ15018 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
MJ15018
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.0A ,IB= 0.1A
VBE(on) Base-Emitter Saturation Voltage
IC= 1.0A ,VCE= 4.0V
ICEO
Collector Cutoff Current
VCE= 150V, IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE=4V
hFE-2
DC Current Gain
IC= 3A ; VCE=4V
MIN
MAX UNIT
200
V
1.0
V
2
V
0.5
mA
0.5
mA
30
10
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number MJ15018
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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