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MJ15024G Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistors MJ15024G.

General Description

·Complement to Type PNP MJ15025 ·Excellent Safe Operating Area ·High DC current Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage 400 V 250 V 5 V IC Collector Current-Continuous ICM Collector Current-Peak (1) IB Base Current-Continuous 16 A 30 A 5 A PD Total Power Dissipation @TC=25℃ 250 W Tj Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle< 10%.

MAX 0.70 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 (1) VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A;

IB= 0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A;

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