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isc Silicon NPN Power Transistors
MJ15024G
DESCRIPTION ·Complement to Type PNP MJ15025 ·Excellent Safe Operating Area ·High DC current Gain ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power audio, disk head positioners
and other linear applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
400
V
250
V
5
V
IC
Collector Current-Continuous
ICM
Collector Current-Peak
(1)
IB
Base Current-Continuous
16
A
30
A
5
A
PD
Total Power Dissipation @TC=25℃
250
W
Tj
Junction Temperature
-65~200 ℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Res