MJ2501 - PNP Transistor

Inchange Semiconductor

General Description

Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 1000 (Min) @ IC = -5A Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output device

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MJ2501 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	MJ2501
Manufacturer	Inchange Semiconductor
File Size	202.06 KB
Description	PNP Transistor
Datasheet	MJ2501 Datasheet

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isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC = -5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -10 A IB Base Current -0.