Datasheet4U Logo Datasheet4U.com

MJ410 - NPN Transistor

General Description

High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V(Min.) Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium to high voltage inverters, conve

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MJ410 5 AMPERE POWER TRANSISTOR Motorola
MJ410 SILICON POWER TRANSISTOR SavantIC
MJ410 NPN POWER TRANSISTOR Digitron
MJ411 Bipolar NPN Device Seme LAB
MJ411 NPN POWER TRANSISTOR Digitron

Other Datasheets by Inchange Semiconductor

Part Number Description
MJ411 NPN Transistor
MJ413 NPN Transistor
MJ4034 NPN Transistor
MJ423 NPN Transistor
MJ4502 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium to high voltage inverters, converters, regulators and switching circuits.