MJE801T - NPN Transistor

Inchange Semiconductor

General Description

Collector Emitter Breakdown Voltage : V(BR)CEO = 60 V DC Current Gain : hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A Complement to Type MJE701T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f

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Datasheet Details

Part number	MJE801T
Manufacturer	Inchange Semiconductor
File Size	208.43 KB
Description	NPN Transistor
Datasheet	MJE801T Datasheet

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60 V ·DC Current Gain— : hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A ·Complement to Type MJE701T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.