MJE802T
MJE802T is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector- Emitter Breakdown Voltage-
: V(BR)CEO = 80 V
- DC Current Gain-
: h FE = 750(Min) @ IC= 1.5A = 100(Min) @ IC= 4A
- plement to Type MJE702T
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general-purpose amplifier and low-speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL...
