| Part number | MJE802T |
|---|---|
| Datasheet | MJE802T-INCHANGE.pdf |
| File Size | 207.99 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector Emitter Breakdown Voltage : V(BR)CEO = 80 V ·DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MJE802T | POWER TRANSISTOR | Central Semiconductor |
 |
MJE802 | NPN power Darlington transistor | ST Microelectronics |
 |
MJE802 | NPN Epitaxial Silicon Darlington Transistor | Fairchild |
 |
MJE802 | 4.0 AMPERE DARLINGTON POWER TRANSISTORS | Motorola |
 |
MJE802 | DARLINGTON POWER TRANSISTORS | ON |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| MJE802 | NPN Transistor |
| MJE800 | NPN Transistor |
| MJE800T | NPN Transistor |
| MJE801 | NPN Transistor |
| MJE801T | NPN Transistor |
| MJE803 | NPN Transistor |
| MJE803T | NPN Transistor |
| MJE8500 | NPN Transistor |
| MJE8503 | NPN Transistor |
| MJE1100 | NPN Transistor |
