| Part number | MJE803T |
|---|---|
| Datasheet | MJE803T-INCHANGE.pdf |
| File Size | 208.19 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·Collector Emitter Breakdown Voltage : V(BR)CEO = 80 V ·DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJE803T | POWER TRANSISTOR | Central Semiconductor |
 |
MJE803 | SILICON NPN POWER DARLINGTON TRANSISTORS | ST Microelectronics |
 |
MJE803 | NPN Epitaxial Silicon Darlington Transistor | Fairchild |
