Datasheet4U Logo Datasheet4U.com

MJW1302A - PNP Transistor

Description

High DC current amplifier rate hFE: 50-200@VCE= -5V,IC= -1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High power audio, disk head positioners and other linear applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MJW1302A PNP Silicon Power Bipolar Transistors ON Semiconductor
MJW16010 15 AMPERE NPN SILICON POWER TRANSISTORS Motorola
MJW16010 NPN SILICON POWER TRANSISTORS ON
MJW16010 SILICON POWER TRANSISTOR SavantIC
MJW16010A POWER TRANSISTOR Motorola

Other Datasheets by Inchange Semiconductor

Part Number Description
MJW16010 NPN Transistor
MJW16010A NPN Transistor
MJW16018 NPN Transistor
MJW18020G NPN Transistor
MJW21191 PNP Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor DESCRIPTION ·High DC current amplifier rate hFE: 50-200@VCE= -5V,IC= -1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICP Collector Current-Pulse -25 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 200 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.
Published: |