Datasheet Details
| Part number | MJW1302A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.01 KB |
| Description | PNP Transistor |
| Datasheet | MJW1302A-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistor.
| Part number | MJW1302A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.01 KB |
| Description | PNP Transistor |
| Datasheet | MJW1302A-INCHANGE.pdf |
|
|
|
·High DC current amplifier rate hFE: 50-200@VCE= -5V,IC= -1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power audio, disk head positioners and other linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICP Collector Current-Pulse -25 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 200 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.63 UNIT ℃/W MJW1302A isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-100mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJW1302A | PNP Silicon Power Bipolar Transistors | ON Semiconductor |
| Part Number | Description |
|---|---|
| MJW16010 | NPN Transistor |
| MJW16010A | NPN Transistor |
| MJW16018 | NPN Transistor |
| MJW18020G | NPN Transistor |
| MJW21191 | PNP Transistor |
| MJW21192 | NPN Transistor |
| MJW21193 | PNP Transistor |
| MJW21196 | NPN Transistor |
| MJW3281A | NPN Transistor |