isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-100mA ; IB=0
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A
VBE(on) Base-Emitter Saturation Voltage
IC=- 8A; VCE=- 5V
ICBO
Collector Cutoff Current
VCB= -230V ; IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -100mA ; VCE=- 5V
hFE-2
DC Current Gain
IC= -1A ; VCE=- 5V
hFE-3
DC Current Gain
IC= -8A ; VCE= -5V
hFE-4
DC Current Gain
IC= -15A ; VCE= -5V
MJW1302A
MIN MAX UNIT
-230
V
-2
V
-2
V
-50 µA
-5
µA
50 200
50 200
45
12
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our products.
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