Low Collector Saturation Voltage
High DC Current Gain
High Reliability
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Audio power amplifiers
Relay & solenoid drivers
Motor controls
General purpose power amplifi
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio power amplifiers ·Relay & solenoid drivers ·Motor controls ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
330-430
V
VCEO
Collector-Emitter Voltage
330-430
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
60
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
MN638S
isc website：www.iscsemi.
MN638S Datasheet
