R6009ENJ - N-Channel MOSFET

INCHANGE

📥 Download Datasheet

R6009ENJ Datasheet Preview — Preview of R6009ENJ PDF

Datasheet Details

Part number	R6009ENJ
Manufacturer	INCHANGE
File Size	250.73 KB
Description	N-Channel MOSFET
Datasheet	R6009ENJ-INCHANGE.pdf

R6009ENJ Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse 18 A PD Total Dissipation @TC=25℃ 94 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resi

Features

Drain Current.
ID= 9A@ TC=25℃.
Drain Source Voltage- : VDSS=600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 535mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 R6009ENJ Similar Datasheet

R6009JND3 - Power MOSFET (ROHM)
R6009KNJ - Power MOSFET (ROHM)
R6009KNX - Power MOSFET (ROHM)
R600 - General Purpose Rectifier (Powerex Power Semiconductors)
R6000 - High Voltage Rectifiers (LGE)
R6000F - 0.2mA Fast Recovery High Voltage Rectifier (Micro Commercial Components)
R6000GP - High Voltage Silicon Rectifier (MCC)
R6002ENH - Power MOSFET (ROHM)

Other Datasheets by INCHANGE

R6009ENX - N-Channel MOSFET
R6009JNJ - N-Channel MOSFET
R6009JNX - N-Channel MOSFET
R6002END3 - N-Channel MOSFET
R6003KND3 - N-Channel MOSFET
R6004ENJ - N-Channel MOSFET

Published: Mar 1, 2021 |