R6015ENX
FEATURES
- Low on-resistance
- Fast switching speed
- Parallel use is easy
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Switching applications
INCHANGE Semiconductor
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBO L
PARAMETER
VALUE
VDSS Drain-Source Voltage
VGSS ID IDM
Gate-Source Voltage;static Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed
±20
15 8.1
Total Dissipation
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
SYMBO L
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a )
Channel-to-ambient thermal resistance
MA X
UNIT
℃/W
℃/W...
