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Inchange Semiconductor
R6018JNX
FEATURES - With TO-220F packaging - High speed switching - Low gate input resistance - Standard level gate drive - Easy to use - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - Power supply - Switching applications - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±30 Drain Current-Continuous Drain Current-Single Pulsed Total Dissipation Tj Operating Junction Temperature Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal...