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Schottky Barrier Rectifier
INCHANGE Semiconductor
RB215T-90NZ
FEATURES ·With TO-220F packaging ·High junction temperature capability ·Low forward voltage ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRMS
VR
IF(AV)
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
Average Rectified Forward Current @Tc=110℃
VALUE
UNI T
90
V
20
A
IF(RMS) RMS Forward Current
40
A
Nonrepetitive Peak Surge Current
IFSM
(10ms single half sine-wave superimposed on
100
A
rated load conditions)
TJ
Junction Temperature