RBQ30TB45BNZ - Schottky Barrier Rectifier

Inchange Semiconductor

Key Features

Low Forward Voltage.
Power Mold Type.
High reliability.
Low Stored Charge Majority Carrier Conduction.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

RBQ30TB45BNZ schottky barrier rectifier by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	RBQ30TB45BNZ
Manufacturer	Inchange Semiconductor
File Size	171.83 KB
Description	Schottky Barrier Rectifier
Datasheet	RBQ30TB45BNZ Datasheet

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Schottky Barrier Rectifier INCHANGE Semiconductor RBQ30TB45BNZ FEATURES ·Low Forward Voltage ·Power Mold Type ·High reliability ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Switching power supply ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 100℃ IFSM Nonrepetitive Peak Surge Current 60Hz half sin Wave 1cycle VALUE UNIT 45 V 30 A 100 A TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website：www.