S2000 Overview
·High Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= 50mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A ;IB= 1.0A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A ;IB= 1.0A ICBO...
