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SFT1202 - NPN Transistor

General Description

Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.165V(Max)( IC= 1A; IB= 0.1A) Fast -Switching speed High allowable power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC/DC converter Relay dirvers

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.165V(Max)( IC= 1A; IB= 0.1A) ·Fast -Switching speed ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·DC/DC converter ·Relay dirvers ·Lamp dirvers ·Motor dirvers，inverter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current Collector Power Dissipation PC Ta=25℃ Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 180 V 150 V 7 V 2 A 3 A 0.