STH80N10F7-2 mosfet equivalent, n-channel mosfet.
*Extremely low gate charge
*Ultra low on-resistance
*Low gate input resistance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device.
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source V.
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