STP8NK80ZFP - N-Channel MOSFET

Inchange Semiconductor

General Description

Drain Current ID=6.2A@ TC=25℃ Drain Source Voltage- : VDSS=800V(Min) 100% avalanche tested Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB

📥 Download Datasheet

STP8NK80ZFP n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	STP8NK80ZFP
Manufacturer	Inchange Semiconductor
File Size	196.77 KB
Description	N-Channel MOSFET
Datasheet	STP8NK80ZFP Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
STP8NK80ZFP	N-CHANNEL POWER MOSFET	STMicroelectronics
STP8NK80Z	N-CHANNEL POWER MOSFET	ST Microelectronics
STP8NK85Z	N-CHANNEL Zener-Protected SuperMESH MOSFET	ST Microelectronics
STP8NK100Z	N-CHANNEL Zener-Protected SuperMESH TM MOSFET	ST Microelectronics
STP8N120K5	N-channel Power MOSFET	STMicroelectronics

Other Datasheets by Inchange Semiconductor

Part Number	Description
STP8N65M5	N-Channel MOSFET
STP8NM50N	N-Channel MOSFET
STP8NM60	N-Channel MOSFET
STP8NM60FP	N-Channel MOSFET
STP8NM60ND	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP8NK80ZFP DESCRIPTION ·Drain Current ID=6.2A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·100% avalanche tested ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V Drain Current-continuous@ TC=25℃ 6.2 ID A Drain Current-continuous@ TC=100℃ 3.9 ICM Collector Current-Peak 24.8 A Ptot Total Dissipation@TC=25℃ 30 W Tj Max.