SiHF22N65E - N-Channel MOSFET

Inchange Semiconductor

Key Features

With TO-220F packaging.
High speed switching.
Low gate input resistance.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

SiHF22N65E n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	SiHF22N65E
Manufacturer	Inchange Semiconductor
File Size	221.06 KB
Description	N-Channel MOSFET
Datasheet	SiHF22N65E Datasheet

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isc N-Channel MOSFET Transistor SiHF22N65E ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 22 14 56 PD Total Dissipation 35 Tj Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.