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TIP117 - PNP Transistor

General Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -1A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.5V(Max)@ IC= -2A Complement to Type TIP112 Minimum Lot-to-Lot variations for robust device performance an

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isc Silicon PNP Darlington Power Transistor TIP117 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.5V(Max)@ IC= -2A ·Complement to Type TIP112 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.