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TIP36C - PNP Transistor

General Description

·DC Current Gain- : hFE= 25(Min)@IC = -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·Complement to Type TIP35C ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= -1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -25 A ICM Collector Current-peak -40 A IB Base Current -5 A PC Collector Power Dissipation@TC=25℃ 125 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.0 ℃/W isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor TIP36C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -15A ;IB= -1.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -25A;

IB= -5A VBE(on)-1 Base-Emitter On Voltage IC= -15A ;

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor TIP36C.