isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VCE(sat)-3* Collector-Emitter Saturation Voltage IC= 10A; IB= 2A
VBE(sat)-1* Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
VBE(sat)-2* Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
VBE(sat)-3* Base-Emitter Saturation Voltage
IC= 10A; IB= 2A
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE*
DC Current Gain
*:Pulse test PW≤300us,duty cycle≤1.5%
IC= 0.5A; VCE= 5V
TIPL765
MIN MAX UNIT
400
V
0.5
V
1.0
V
2.5
V
1.1
V
1.3
V
1.7
V
1
mA
15
60
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