Datasheet Details
| Part number | TIPL765 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.08 KB |
| Description | NPN Transistor |
| Datasheet | TIPL765-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | TIPL765 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.08 KB |
| Description | NPN Transistor |
| Datasheet | TIPL765-INCHANGE.pdf |
|
|
|
·125W at 25℃ case temperature ·10A continue collector current ·High-voltage,high forward and reverse energy ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for automotive ignition and switching regulator applications ·Characterized for operation in ignition and switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 10 A ICM Collector Current-peak 15 A PC Collector Power Dissipation@ TC=25℃ 125 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1 ℃/W TIPL765 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.4A VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
TIPL765 | NPN SILICON POWER TRANSISTORS | Power Innovations Limited |
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TIPL765A | NPN SILICON POWER TRANSISTORS | Power Innovations Limited |
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