Datasheet Details
| Part number | TTA1452B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.50 KB |
| Description | PNP Transistor |
| Datasheet | TTA1452B-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | TTA1452B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.50 KB |
| Description | PNP Transistor |
| Datasheet | TTA1452B-INCHANGE.pdf |
|
|
|
·High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ·Low collector-emitter saturation voltage: VCE(sat)≤ -0.4V@IC= -6A;
IB= -300mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICP Collector Current-Pulse PC Total Power Dissipation @ Ta=25℃ -15 A 2 W PC Total Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ TTA1452B isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VBR(CEO) Collector-Emitter Breakdown voltage IC= -50mA;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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TTA1452B | Silicon PNP Transistor | Toshiba |
| Part Number | Description |
|---|---|
| TTA1452 | PNP Transistor |
| TTA1943 | PNP Transistor |
| TTA0001 | PNP Transistor |
| TTA0002 | PNP Transistor |