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TTA1452B - PNP Transistor

Description

High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A Low collector-emitter saturation voltage: VCE(sat)≤ -0.4V@IC= -6A; IB= -300mA Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching ABSOLUTE MAXIMUM RATINGS(

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isc Silicon PNP Power Transistor DESCRIPTION ·High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ·Low collector-emitter saturation voltage: VCE(sat)≤ -0.4V@IC= -6A; IB= -300mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICP Collector Current-Pulse PC Total Power Dissipation @ Ta=25℃ -15 A 2 W PC Total Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ TTA1452B isc website：www.iscsemi.
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