Datasheet Details
| Part number | TTA1452 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.20 KB |
| Description | PNP Transistor |
| Datasheet | TTA1452-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor TTA1452.
| Part number | TTA1452 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.20 KB |
| Description | PNP Transistor |
| Datasheet | TTA1452-INCHANGE.pdf |
|
|
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·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A;
IB= -0.3A VBE(sat) Base-Emitter Saturation Voltage IC= -6A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
TTA1452B | Silicon PNP Transistor | Toshiba |
| Part Number | Description |
|---|---|
| TTA1452B | PNP Transistor |
| TTA1943 | PNP Transistor |
| TTA0001 | PNP Transistor |
| TTA0002 | PNP Transistor |