TTA1452B Description
·High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ·Low collector-emitter saturation voltage: 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VBR(CEO) Collector-Emitter Breakdown voltage IC= -50mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A;.