Datasheet4U Logo Datasheet4U.com

TTA1452B - PNP Transistor

General Description

High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A Low collector-emitter saturation voltage: VCE(sat)≤ -0.4V@IC= -6A; IB= -300mA Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching ABSOLUTE MAXIMUM RATINGS(

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TTA1452B Silicon PNP Transistor Toshiba
TTA145N08A 85V N-Channel Trench MOSFET Unigroup
TTA1586FU Silicon PNP Transistor Toshiba Semiconductor
TTA1713 Silicon PNP Transistor Toshiba
TTA1943 Silicon PNP Transistor Toshiba

Other Datasheets by Inchange Semiconductor

Part Number Description
TTA1452 PNP Transistor
TTA1943 PNP Transistor
TTA0001 PNP Transistor
TTA0002 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor DESCRIPTION ·High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ·Low collector-emitter saturation voltage: VCE(sat)≤ -0.4V@IC= -6A; IB= -300mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICP Collector Current-Pulse PC Total Power Dissipation @ Ta=25℃ -15 A 2 W PC Total Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ TTA1452B isc website：www.iscsemi.