TTC3710B
DESCRIPTION
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
- plement to Type TTA1452B
- Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
- High -current switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃
TTC3710B isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER...
