TTC3710B Datasheet and Specifications PDF

The TTC3710B is a NPN Transistor.

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Part NumberTTC3710B Datasheet
ManufacturerInchange Semiconductor
Overview ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Complement to Type TTA1452B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·High -c. Saturation Voltage IC= 6.0A; IB= 0.3A ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 1V hFE-2 DC Current Gain IC= 6A; VCE= 1V TTC3710B MIN TYP. MAX UNIT 80 V 0.4 V 1.2 V 5 μA 5 μA 120 240 40 NO.
Part NumberTTC3710B Datasheet
DescriptionNPN Transistor
ManufacturerToshiba
Overview Bipolar Transistors Silicon NPN Epitaxial Type TTC3710B TTC3710B 1. Applications • High-Current Switching 2. Features (1) Low collector-emitter saturation voltage: VCE(sat) = 0.4 V (max) (IC = 6 A ,. (1) Low collector-emitter saturation voltage: VCE(sat) = 0.4 V (max) (IC = 6 A , IB = 0.3 A) (2) High speed switching: tstg = 1 µs (typ.) (3) Complementary to TTA1452B 3. Packaging and Internal Circuit 1. Base 2. Collector 3. Emitter TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless .