Datasheet Details
| Part number | TYN610F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 245.56 KB |
| Description | Thyristor |
| Datasheet | TYN610F-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor TYN610F.
| Part number | TYN610F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 245.56 KB |
| Description | Thyristor |
| Datasheet | TYN610F-INCHANGE.pdf |
|
|
|
·In a full package ,plastic envelope ·High surge capability ·High state current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The TYN610F is designed for power supplies up to 400Hz on resistive or inductive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(RMS) RMS On-state current Tc=100℃ 10 A IT(AV) On-state current Tc=100℃ 6.4 ITSM Surge non-repetitive on-state current Tp=10ms 100 Repetitive rate of rise of on-state di/dt current after triggering 50 Tj=125℃ I2t I2t for fusing t = 10 ms 50 A A A/us A2S Tj Operating Junction temperature 125 ℃ Tstg Storage temperature -40 ~+150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor TYN610F ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT IRRM Repetitive peak reverse current VRR=600V, Tj=25℃ 0.01 mA IDRM Repetitive peak off-state current VDR=600V, Tj=25℃ 0.01 mA VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IH Holding current IL Latching current ITM= 20A VD=12V;
RL=33Ω VD=12V;
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