IRFR9210N mosfet equivalent, power mosfet.
de Recovery dv/dt Test Circuit
D.U.T*
+
+
Circuit Layout Considerations
* Low Stray Inductance
* Ground Plane
* Low Leakage Inductance Current Transforme.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 117.52KB)