IRGP30B60KD-E transistor equivalent, insulated gate bipolar transistor.
* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery .
- 5V
Rg
DUT / DRIVER
VCC
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit VCC R = ICM
DUT
Rg
VCC
Fi.
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