IRGPH30S transistor equivalent, insulated gate bipolar transistor.
* Switching-loss rating includes all "tail" losses
* Optimized for line frequency operation (to 400Hz)
C
Standard Speed IGBT
VCES = 1200V
G E
VCE(sat) ≤ 3.0V
@.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ T.
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide.
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