IRL5602S Datasheet - IRF

HEXFET Power MOSFET

IRL5602S Features

* ENSIONS AFTER SOLDER DIP. 2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS. TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 8.89 (.350) 17

IRL5602S General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRL5602S Datasheet (171.61 KB)

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IRL5602S

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IRF

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171.61 KB

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Hexfet power mosfet.
PD- 91888 IRL5602S HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Swit.

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IRL5602S HEXFET Power MOSFET IRF

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IRL5602S Features

IRL5602S General Description

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