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Integrated Silicon Solution Electronic Components Datasheet

IS29GL256 Datasheet

256M-BIT 3.0V PAGE MODE PARALLEL FLASH MEMORY

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IS29GL256
256M-BIT
3.0V PAGE MODE PARALLEL FLASH MEMORY
ADVANCED DATA SHEET


Integrated Silicon Solution Electronic Components Datasheet

IS29GL256 Datasheet

256M-BIT 3.0V PAGE MODE PARALLEL FLASH MEMORY

No Preview Available !

IS29GL256H/L
IS29GL256
256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory
Page mode Flash Memory, CMOS 3.0 Volt-only
ADVANCED INFORMATION
FEATURES
Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
High performance
- Access times as fast as 70ns
VIO Input/Output 1.65 to 3.6 volts
- All input levels (address, control, and DQ input
levels) and outputs are determined by voltage
on VIO input. VIO range is 1.65 to VCC
16-word/32-byte page read buffer
256-word/512-byte write buffer reduces overall
programming time for multiple-word updates
Secured Silicon Sector (SSR) region
- 512-word/1024-byte sector for permanent,
secure identification
- 256-word Factory Locked SSR and 256-word
Customer Locked SSR
Uniform 64Kword/128KByte Sector
Architecture 256 sectors
Suspend and Resume commands for Program
and Erase operations
Write operation status bits indicate program
and erase operation completion
Persistent methods of Advanced Sector
Protection
WP#/ACC input
- Accelerates programming time (when VHH is
applied) for greater throughput during system
production
- Protects first or last sector regardless of sector
protection settings
Hardware reset input (RESET#) resets device
Ready/Busy# output (RY/BY#) detects
program or erase cycle completion
Minimum 100K program/erase endurance
cycles.
Package Options
- 56-pin TSOP
- 64-ball 11mm x 13mm BGA
- 64-ball 9mm x 9mm BGA
- 56-ball 7mm x 9mm BGA
Temperature Range
- Extended Grade: -40°C to +105°C
- V Grade (Hybrid): -40°C to +125°C
- Automotive Grade: up to +125°C
Support for CFI (Common Flash Interface)
GENERAL DESCRIPTION
The IS29GL256 offers a fast page access time of 25ns with a corresponding random access time as
fast as 70ns. It features a Write Buffer that allows a maximum of 256 words/512 bytes to be
programmed in one operation, resulting in faster effective programming time than standard
programming algorithms. This makes the device ideal for today’s embedded applications that require
higher density, better performance and lower power consumption.
Integrated Silicon Solution, Inc. - www.issi.com
Rev. 00A
08/08/2014
2


Part Number IS29GL256
Description 256M-BIT 3.0V PAGE MODE PARALLEL FLASH MEMORY
Maker ISSI
Total Page 30 Pages
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